| Основные параметры | |
|---|---|
| type | background suppression |
| version | wafer mapping sensor |
| light source | pulsed red laser diode |
| sensing distance Tw | 123 … 143 mm |
| repeat accuracy | |
| power on indication | LED green |
| output indicator | LED yellow |
| sensing distance adjustment | no |
| laser class | 2 |
| wave length | 650 nm |
| suppression of reciprocal influence | yes |
| Электрические параметры | |
| response time / release time | |
| voltage supply range +Vs | 10 … 30 VDC |
| current consumption max. (no load) | 35 mA |
| current consumption typ. | 25 mA |
| voltage drop Vd | |
| output function | light / dark operate |
| output circuit | NPN |
| output current | |
| short circuit protection | yes |
| reverse polarity protection | yes |
| Механические параметры | |
| width / diameter | 15,4 mm |
| height / length | 50 mm |
| depth | 50 mm |
| type | rectangular |
| housing material | die-cast zinc |
| front (optics) | glass |
| connection types | cable 5 pin, 2 m |
| Параметры окружающей среды | |
| operating temperature | -5 … +50 °C |
| protection class | IP 67 |